Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 461/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 105V 5.8A TO220FL |
6,768 |
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- | N-Channel | MOSFET (Metal Oxide) | 105V | 5.8A (Ta), 26A (Tc) | 6V, 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 46nC @ 10V | ±25V | 2445pF @ 25V | - | 2.2W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
4,140 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 3.7A (Ta) | 10V | 65mOhm @ 3.7A, 10V | 4V @ 1.037mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 25V 8A 8-SOIC |
4,824 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 8A (Tc) | 4.5V, 10V | 23mOhm @ 7A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±16V | 680pF @ 13V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
FET 80V 3.7 MOHM MLP33 |
2,574 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 6A (Tc) | 4.5V, 10V | 36.5mOhm @ 4A, 10V | 2.5V @ 20µA | 9nC @ 10V | ±20V | 595pF @ 40V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 20V 5.4A 8SOIC |
2,250 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22nC @ 4.5V | ±12V | 780pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
3,508 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V DFN5 WETTABLE |
8,568 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2200pF @ 50V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252 |
8,712 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252-3 |
4,536 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 900V 6A TO220F |
7,722 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 2.2Ohm @ 3A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1450pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 55V 5A SOT223 |
8,442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 75V 68A PQFN |
6,804 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 68A (Tc) | 6V, 10V | 8mOhm @ 41A, 10V | 3.7V @ 100µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
6,840 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 173nC @ 10V | ±20V | 13000pF @ 15V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3 |
8,298 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | ±20V | 3250pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 15A 8DFN |
2,646 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 50A (Tc) | 6V, 10V | 12.6mOhm @ 15A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±20V | 2075pF @ 50V | - | 6.25W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
5,094 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET N-CH 30V 35A WPAK |
3,474 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.6mOhm @ 17.5A, 10V | - | 12nC @ 4.5V | ±20V | 2170pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6,750 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 7A TO-220 |
5,490 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 940pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 24A 102A 5DFN |
2,430 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
8,658 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 3V, 8V | 3.4mOhm @ 30A, 8V | 1.6V @ 250µA | 18.3nC @ 4.5V | +10V, -8V | 2600pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N CH 200V 18A TO220F |
7,704 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | 5V @ 250µA | 26nC @ 10V | ±30V | 1180pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-263-3 |
5,778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 28A DIRECTFET |
2,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 4700pF @ 15V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3 |
7,416 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 12V 31A SC70-6 |
8,820 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 31A (Tc) | 1.8V, 4.5V | 13mOhm @ 5A, 4.5V | 1V @ 250µA | 72nC @ 8V | ±8V | 2520pF @ 6V | - | 3.5W (Ta), 19W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 5.4A 1206-8 |
2,718 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.4A (Ta) | 2.5V, 4.5V | 28mOhm @ 5.4A, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 12V 7.8A 6TSOP |
3,402 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 7.8A (Tc) | 4.5V | 36mOhm @ 6.3A, 4.5V | 1V @ 250µA | 30nC @ 8V | ±8V | 910pF @ 6V | - | 2W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
8,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 40A DPAK-3 |
4,140 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | +10V, -20V | 4140pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |