Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 458/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 30V 31.4A SO8FL |
5,544 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 31.4A (Ta), 143A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.71W (Ta), 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO262-3 |
3,492 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 8.2mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET P-CHANNEL 30V 60A ATPAK |
5,832 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 13mOhm @ 28A, 10V | 2.6V @ 1mA | 47nC @ 10V | ±20V | 2430pF @ 10V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CHANNEL 40V 55A ATPAK |
4,734 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 55A (Ta) | 4.5V, 10V | 17mOhm @ 25A, 10V | 2.6V @ 1mA | 47nC @ 10V | ±20V | 2400pF @ 20V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CHANNEL 60V 38A ATPAK |
5,166 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta) | 4V, 10V | 29.5mOhm @ 18A, 10V | 2.6V @ 1mA | 55nC @ 10V | ±20V | 2400pF @ 20V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 20A SO-8FL |
5,652 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 15.5A 8SOIC |
8,388 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 15.5A (Ta) | 4.5V, 10V | 6.4mOhm @ 15.5A, 10V | 2.3V @ 250µA | 95nC @ 10V | ±20V | 4525pF @ 50V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 10A TO220 |
3,816 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 10A (Ta), 100A (Tc) | 10V | 10.5mOhm @ 30A, 10V | 4V @ 250µA | 136nC @ 10V | ±25V | 5640pF @ 30V | - | 2.1W (Ta), 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 12A TO-220F |
8,604 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 68mOhm @ 6A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±20V | 1000pF @ 50V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
3,472 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
3,942 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL |
8,514 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 20V | - | 3.7W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8TSON |
5,616 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 4.3A 1212-8 |
2,376 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 1.8V, 4.5V | 48mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | ±12V | - | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 8V 8TSSOP |
4,608 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 28mOhm @ 6A, 4.5V | 450mV @ 250µA (Min) | 40nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
2,592 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A 1212-8 |
3,708 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 11mOhm @ 14A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT223 |
2,520 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 5V, 10V | 550mOhm @ 700mA, 10V | - | - | - | - | - | 2.5W (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 48A 8DFN |
5,526 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.3V @ 250µA | 95nC @ 10V | ±20V | 4525pF @ 50V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 60V 8SO |
8,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Ta) | 4.5V, 10V | 50mOhm @ 3.6A, 10V | 3V @ 250µA | 20.4nC @ 10V | ±20V | 1063pF @ 30V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V D2PAK TO-263 |
8,352 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO220AB |
5,274 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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EPC |
GANFET TRANS 100V DIE CU PILLAR |
6,138 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.3nC @ 5V | +6V, -4V | 280pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Alpha & Omega Semiconductor |
MOSFET N-CH 700V 9A TO220F |
7,182 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1630pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 25V 22.4A U8FL |
3,348 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 22.4A (Ta), 94A (Tc) | 4.5V, 10V | 3.3mOhm @ 30A, 10V | 2.1V @ 250µA | 18.9nC @ 10V | ±20V | 1205pF @ 12V | - | 2.66W (Ta), 46.3W (Tc) | 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 250V 14A TO-220 |
8,424 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 7A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1600pF @ 25V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MV POWER MOS |
6,480 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
4,644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
2,520 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
5,796 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |