Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF3205ZLPBF

IRF3205ZLPBF

For Reference Only

Part Number IRF3205ZLPBF
PNEDA Part # IRF3205ZLPBF
Description MOSFET N-CH 55V 75A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3205ZLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3205ZLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF3205ZLPBF Datasheet
  • where to find IRF3205ZLPBF
  • Infineon Technologies

  • Infineon Technologies IRF3205ZLPBF
  • IRF3205ZLPBF PDF Datasheet
  • IRF3205ZLPBF Stock

  • IRF3205ZLPBF Pinout
  • Datasheet IRF3205ZLPBF
  • IRF3205ZLPBF Supplier

  • Infineon Technologies Distributor
  • IRF3205ZLPBF Price
  • IRF3205ZLPBF Distributor

IRF3205ZLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3450pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

IRL1104LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

104A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3445pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

APT48M80L

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

305nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9330pF @ 25V

FET Feature

-

Power Dissipation (Max)

1135W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 [L]

Package / Case

TO-264-3, TO-264AA

TPCF8A01(TE85L)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2V, 4.5V

Rds On (Max) @ Id, Vgs

49mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-8 (2.9x1.5)

Package / Case

8-SMD, Flat Lead

PMCM6501UNEZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

21mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

0.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

105pF @ 10V

FET Feature

-

Power Dissipation (Max)

400mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WLCSP (1.48x.98)

Package / Case

6-XFBGA, WLCSP

SI7104DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 26.1A, 4.5V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 6V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Recently Sold

4608X-102-682LF

4608X-102-682LF

Bourns

RES ARRAY 4 RES 6.8K OHM 8SIP

NLC565050T-101K-PF

NLC565050T-101K-PF

TDK

FIXED IND 100UH 250MA 1.6 OHM

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

DEA202450BT-1294C1-H

DEA202450BT-1294C1-H

TDK

FILTER BANDPASS WLAN&BLUETOOTH

BLM31PG391SN1L

BLM31PG391SN1L

Murata

FERRITE BEAD 390 OHM 1206 1LN

BLM18KG121TN1D

BLM18KG121TN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

PBRC4.00HR50X000

PBRC4.00HR50X000

Kyocera

CER RES 4.0000MHZ 30PF SMD

KT2520Y40000ECV28TBA

KT2520Y40000ECV28TBA

Kyocera

XTAL OSC TCXO 40.0000MHZ SNWV