Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 462/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 30V 40A 2WPACK |
7,272 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | - | 21nC @ 4.5V | ±20V | 3270pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N CH 400V 8A TO252 |
4,608 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 760pF @ 25V | - | 125W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 24A DFN5X6 |
7,614 |
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SRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 85A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2V @ 250µA | 51nC @ 10V | ±12V | 6780pF @ 15V | Schottky Diode (Body) | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 10A TO220 |
3,438 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1645pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 10A TO220F |
3,508 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1645pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 7A TO251 |
2,880 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | ±30V | 372pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 13A TO220 |
7,020 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 72A (Tc) | 10V | 6.5mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.1W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 13A TO220F |
3,798 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 54A (Tc) | 10V | 6.5mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.1W (Ta), 36.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 80A |
7,326 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.3mOhm @ 48A, 10V | 3.9V @ 100µA | 90nC @ 10V | ±20V | 3199pF @ 25V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 60V 16.5A POWERDI |
8,208 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16.5A (Ta), 88A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 40.1nC @ 10V | ±20V | 2597pF @ 30V | - | 3.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT223 |
3,240 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 5V, 10V | 550mOhm @ 700mA, 10V | - | - | - | - | - | 2.5W (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
PLANAR >= 100V |
2,718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
6,912 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 12A TO263 |
7,740 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1633pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP-ADV |
3,526 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 2.2mOhm @ 24A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6200pF @ 10V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 100V 66A D2PAK |
6,912 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 66A (Tc) | 5V, 10V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 60nC @ 5V | ±10V | 6813pF @ 25V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 5DFN |
5,202 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
3,508 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | - | 4V @ 40µA | 56nC @ 10V | ±20V | 4500pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
4,374 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 130A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO252 |
2,466 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | ±20V | 615pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO252 |
5,616 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | ±20V | 615pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V DFN5 |
2,034 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3 |
2,322 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 30A DPAK-3 |
2,898 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80nC @ 10V | +10V, -20V | 3950pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 38A 200A 5DFN |
8,028 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | 4300pF @ 20V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
CONSUMER |
5,004 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 34A SOP |
2,322 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 8mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | ±20V | 3000pF @ 40V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 100A POWERDI506 |
8,226 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20.6A (Ta), 100A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 3.2W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
6,552 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
7,434 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |