SI4778DY-T1-GE3
For Reference Only
| Part Number | SI4778DY-T1-GE3 |
| PNEDA Part # | SI4778DY-T1-GE3 |
| Description | MOSFET N-CH 25V 8A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 4,824 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4778DY-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4778DY-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4778DY-T1-GE3 Datasheet
- where to find SI4778DY-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI4778DY-T1-GE3
- SI4778DY-T1-GE3 PDF Datasheet
- SI4778DY-T1-GE3 Stock
- SI4778DY-T1-GE3 Pinout
- Datasheet SI4778DY-T1-GE3
- SI4778DY-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI4778DY-T1-GE3 Price
- SI4778DY-T1-GE3 Distributor
SI4778DY-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 98mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88FL/MCPH6 Package / Case 6-SMD, Flat Leads |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 10V FET Feature - Power Dissipation (Max) 47W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V FET Feature - Power Dissipation (Max) 34.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
