Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 457/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A TO251 |
2,286 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 750mOhm @ 3A, 10V | 4V @ 250µA | 10.8nC @ 10V | ±30V | 554pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 45V 85A 8DFN |
4,284 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 40V | 49A (Ta), 85A (Tc) | 4.5V, 10V | 1.6mOhm @ 20A, 10V | 2.3V @ 250µA | 105nC @ 10V | ±20V | 5570pF @ 20V | - | 6.2W (Ta), 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-PowerVDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A TO252 |
8,874 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 750mOhm @ 3A, 10V | 4V @ 250µA | 10.8nC @ 10V | ±30V | 554pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 100V 10.5A TO-220 |
7,272 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 300mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1035pF @ 25V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO262F |
7,290 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | 263pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Nexperia |
BUK9Y2R8-40H/SOT669/LFPAK |
3,690 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 75V 5A 2WDSON |
4,788 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 5A (Ta), 15A (Tc) | 7V, 10V | 45mOhm @ 8A, 10V | 3.5V @ 8µA | 6nC @ 10V | ±20V | 390pF @ 37.5V | - | 2.2W (Ta), 18W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 25A 8SON |
5,274 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2V @ 250µA | 33nC @ 10V | ±20V | 2000pF @ 15V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 120A SO8FL |
8,964 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 2.4V @ 250µA | 51nC @ 10V | ±20V | 2700pF @ 25V | - | 3.7W (Ta), 127W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 50A POWER56 |
6,228 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 3V @ 250µA | 45nC @ 10V | ±20V | 1960pF @ 20V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK |
7,110 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 11A 8-PQFN |
5,328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 63A (Tc) | 10V | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3152pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP-ADV |
2,358 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115nC @ 10V | +20V, -25V | 4800pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 26.5A 8DFN |
6,372 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 26.5A (Ta), 85A (Tc) | 6V, 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 51nC @ 10V | ±20V | 2848pF @ 40V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
6,192 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 50A DPAK |
3,744 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 15A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 3515pF @ 20V | - | 118W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 139A |
5,796 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 132A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2V @ 90µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.9W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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ON Semiconductor |
MOSFET N-CH 600V 4.6A I-PAK |
3,258 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | ±30V | 600pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A DPAK-3 |
5,526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A DPAK-3 |
8,712 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
5,238 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 5.4mOhm @ 15A, 10V | 2.6V @ 250µA | 68nC @ 10V | ±20V | 3150pF @ 15V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 800V 2.4A TO-220 |
5,616 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 2.4A (Tc) | 10V | 6.3Ohm @ 1.2A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 550pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
3,222 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 4.5V, 10V | 7.8mOhm @ 70A, 10V | 2.2V @ 120µA | 92nC @ 10V | ±16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
5,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 600V 9.9A TO220 |
6,336 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | Super Junction | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MV POWER MOS |
5,922 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A DPAK |
2,430 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 350mOhm @ 1A, 10V | 2.5V @ 1mA | - | ±20V | 400pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 800V 1.6A TO220-3 |
5,022 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 1.6A (Tc) | 10V | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8nC @ 10V | ±20V | 355pF @ 100V | - | 19.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
NFET SO8FL 30V 1.15MO |
5,346 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 41A (Ta), 230A (Tc) | 4.5V, 10V | 1.15mOhm @ 30A, 10V | 2.2V @ 250µA | 82nC @ 10V | ±20V | 5780pF @ 15V | - | 3.13W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 200V 9A D2PAK |
2,088 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 720pF @ 25V | - | 3.13W (Ta), 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |