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IRFH5110TRPBF

IRFH5110TRPBF

For Reference Only

Part Number IRFH5110TRPBF
PNEDA Part # IRFH5110TRPBF
Description MOSFET N-CH 100V 11A 8-PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH5110TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH5110TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFH5110TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3152pF @ 25V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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