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IPAN60R650CEXKSA1

IPAN60R650CEXKSA1

For Reference Only

Part Number IPAN60R650CEXKSA1
PNEDA Part # IPAN60R650CEXKSA1
Description MOSFET NCH 600V 9.9A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPAN60R650CEXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPAN60R650CEXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPAN60R650CEXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs20.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)28W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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