Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMFS4C302NT1G

NTMFS4C302NT1G

For Reference Only

Part Number NTMFS4C302NT1G
PNEDA Part # NTMFS4C302NT1G
Description NFET SO8FL 30V 1.15MO
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4C302NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4C302NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4C302NT1G, NTMFS4C302NT1G Datasheet (Total Pages: 6, Size: 132.29 KB)
PDFNTMFS4C302NT1G Datasheet Cover
NTMFS4C302NT1G Datasheet Page 2 NTMFS4C302NT1G Datasheet Page 3 NTMFS4C302NT1G Datasheet Page 4 NTMFS4C302NT1G Datasheet Page 5 NTMFS4C302NT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMFS4C302NT1G Datasheet
  • where to find NTMFS4C302NT1G
  • ON Semiconductor

  • ON Semiconductor NTMFS4C302NT1G
  • NTMFS4C302NT1G PDF Datasheet
  • NTMFS4C302NT1G Stock

  • NTMFS4C302NT1G Pinout
  • Datasheet NTMFS4C302NT1G
  • NTMFS4C302NT1G Supplier

  • ON Semiconductor Distributor
  • NTMFS4C302NT1G Price
  • NTMFS4C302NT1G Distributor

NTMFS4C302NT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C41A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5780pF @ 15V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

The Products You May Be Interested In

94-4849PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

2SK2989,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

STV160NF03LAT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

5350pF @ 25V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PowerSO

Package / Case

PowerSO-10 Exposed Bottom Pad

SI1302DL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

480mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3

Package / Case

SC-70, SOT-323

AONS32100

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

73A (Ta), 400A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.73mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15200pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

6.2W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (5x6)

Package / Case

8-PowerVDFN

Recently Sold

HSMS-2820-TR1G

HSMS-2820-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT23-3

CDBK0540

CDBK0540

Comchip Technology

DIODE SCHOTTKY 40V 500MA SOD123F

0251002.NRT1L

0251002.NRT1L

Littelfuse

FUSE BRD MNT 2A 125VAC/VDC AXIAL

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

NFE31PT220R1E9L

NFE31PT220R1E9L

Murata

FILTER LC(T) 22PF SMD

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

AZ23C5V6-7-F

AZ23C5V6-7-F

Diodes Incorporated

DIODE ZENER ARRAY 5.6V SOT23-3

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

1N4148-P-TR

1N4148-P-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

XCZU9EG-1FFVB1156I

XCZU9EG-1FFVB1156I

Xilinx

IC SOC CORTEX-A53 1156FCBGA

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

LTM4625EY#PBF

LTM4625EY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A