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FDU7N60NZTU

FDU7N60NZTU

For Reference Only

Part Number FDU7N60NZTU
PNEDA Part # FDU7N60NZTU
Description MOSFET N-CH 600V SGL IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDU7N60NZTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDU7N60NZTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDU7N60NZTU, FDU7N60NZTU Datasheet (Total Pages: 11, Size: 773.49 KB)
PDFFDU7N60NZTU Datasheet Cover
FDU7N60NZTU Datasheet Page 2 FDU7N60NZTU Datasheet Page 3 FDU7N60NZTU Datasheet Page 4 FDU7N60NZTU Datasheet Page 5 FDU7N60NZTU Datasheet Page 6 FDU7N60NZTU Datasheet Page 7 FDU7N60NZTU Datasheet Page 8 FDU7N60NZTU Datasheet Page 9 FDU7N60NZTU Datasheet Page 10 FDU7N60NZTU Datasheet Page 11

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FDU7N60NZTU Specifications

ManufacturerON Semiconductor
SeriesUniFET-II™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.25Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds730pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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