Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 341/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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ON Semiconductor |
MOSFET P-CH 20V 5.5A SSOT-6 |
4,464 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 30nC @ 4.5V | ±8V | 1926pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 20A 8SOIC |
4,842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | 2.2V @ 250µA | 22.5nC @ 10V | ±20V | 951pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 4.3A SSOT-6 |
3,636 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Ta) | 6V, 10V | 55mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 650pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 80V 6-SSOT |
4,194 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 80V | 2.1A (Ta) | 4.5V, 10V | 183mOhm @ 2.1A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 880pF @ 40V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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|
ON Semiconductor |
MOSFET N-CH 150V 1.4A SSOT-6 |
6,624 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.4A (Ta) | 6V, 10V | 425mOhm @ 1.4A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 344pF @ 75V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 60V 7A SOT223 |
8,154 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 18.2A (Tc) | 4.5V, 10V | 28mOhm @ 5A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | 2569pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
2,322 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | ±20V | 3600pF @ 20V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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|
ON Semiconductor |
MOSFET N-CH 150V 4.1A 8-SOIC |
3,672 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.1A (Ta) | 6V, 10V | 67mOhm @ 4.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 760pF @ 75V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
Texas Instruments |
MOSFET N-CH 30V 56A 8SON |
5,076 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 56A (Tc) | 3V, 8V | 7.5mOhm @ 17A, 8V | 1.8V @ 250µA | 6.6nC @ 4.5V | +10V, -8V | 955pF @ 15V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 40V 6.4A SOT223 |
4,878 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 60mOhm @ 3.8A, 10V | 1V @ 250µA | 26.1nC @ 10V | ±20V | 1007pF @ 20V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC |
4,698 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
STMicroelectronics |
MOSFET P-CH 30V 5A 8SOIC |
6,588 |
|
DeepGATE™, STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 56mOhm @ 2.5A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | ±20V | 639pF @ 25V | - | 2.7W (Ta) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A SC70-6 |
2,844 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 1.8V, 4.5V | 1.38Ohm @ 750mA, 4.5V | 1.4V @ 250µA | 14.5nC @ 10V | ±16V | 350pF @ 100V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
Nexperia |
MOSFET N-CH 100V 30A LFPAK33 |
3,996 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tj) | 10V | 36.6mOhm @ 10A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1470pF @ 50V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8 |
6,336 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Ta), 40A (Tc) | 10V | 25.2mOhm @ 20A, 10V | 4V @ 43µA | 17nC @ 10V | ±20V | 1100pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 60V 24A DPAK |
3,240 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 5V, 10V | 40mOhm @ 12A, 10V | 2.5V @ 250µA | 13nC @ 10V | ±18V | 660pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 17A 8DFN |
5,598 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 150V | 5.5A (Ta), 17A (Tc) | 4.5V, 10V | 54mOhm @ 5A, 10V | 2.7V @ 250µA | 20nC @ 10V | ±20V | 675pF @ 75V | - | 4.1W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
5,526 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
|
|
Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
7,074 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 250µA | 37nC @ 10V | ±20V | 2600pF @ 20V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 60A 8TDSON |
5,670 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 9.8mOhm @ 30A, 10V | 3.8V @ 36µA | 28nC @ 10V | ±20V | 2100pF @ 50V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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|
ON Semiconductor |
MOSFET P-CH 60V 3A 8-SOIC |
5,508 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 110mOhm @ 3A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 714pF @ 30V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 150V 2.7A 8-SOIC |
3,978 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.7A (Ta) | 6V, 10V | 85mOhm @ 3.5A, 10V | 2V @ 250µA (Min) | 21nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 36A 8-SOIC |
4,464 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 105nC @ 10V | ±20V | 4230pF @ 20V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Nexperia |
MOSFET N-CH 100V LFPAK |
7,992 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 5V | 12mOhm @ 25A, 5V | 2.1V @ 1mA | 64nC @ 5V | ±10V | 7973pF @ 25V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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|
Infineon Technologies |
MOSFET N-CH 100V 40A TSDSON-8 |
8,046 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 40A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.8V @ 36µA | 28nC @ 10V | ±20V | 2080pF @ 50V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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|
Vishay Siliconix |
MOSFET N-CH 80V 6.7A 8SOIC |
2,520 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 6.7A (Ta) | 6V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA (Min) | 41nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
STMicroelectronics |
MOSFET N-CH 620V 2.7A DPAK |
3,924 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.7A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13nC @ 10V | ±30V | 385pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 100V 12.4A POWER56 |
2,916 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.4A (Ta), 60A (Tc) | 6V, 10V | 8mOhm @ 13A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3000pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 100V 13A 8-PQFN |
6,498 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4340pF @ 25V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
Vishay Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
7,434 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.8V @ 250µA | 49nC @ 10V | ±20V | 1630pF @ 50V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |