SIA456DJ-T1-GE3
For Reference Only
| Part Number | SIA456DJ-T1-GE3 |
| PNEDA Part # | SIA456DJ-T1-GE3 |
| Description | MOSFET N-CH 200V 2.6A SC70-6 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 2,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIA456DJ-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIA456DJ-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIA456DJ-T1-GE3 Datasheet
- where to find SIA456DJ-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SIA456DJ-T1-GE3
- SIA456DJ-T1-GE3 PDF Datasheet
- SIA456DJ-T1-GE3 Stock
- SIA456DJ-T1-GE3 Pinout
- Datasheet SIA456DJ-T1-GE3
- SIA456DJ-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SIA456DJ-T1-GE3 Price
- SIA456DJ-T1-GE3 Distributor
SIA456DJ-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 750mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 700mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer Series NexFET™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V Vgs (Max) -6V Input Capacitance (Ciss) (Max) @ Vds 512pF @ 6V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-DSBGA (1x1) Package / Case 4-UFBGA, DSBGA |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 281pF @ 10V FET Feature - Power Dissipation (Max) 1.13W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/592 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 27.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 4W (Ta), 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-267AB Package / Case TO-267AB |
