BUK9Y12-100E,115
For Reference Only
| Part Number | BUK9Y12-100E,115 |
| PNEDA Part # | BUK9Y12-100E-115 |
| Description | MOSFET N-CH 100V LFPAK |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 7,992 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BUK9Y12-100E Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | BUK9Y12-100E,115 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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BUK9Y12-100E Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 5V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7973pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5199pF @ 15V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO251-3-1 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
