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STS5P3LLH6

STS5P3LLH6

For Reference Only

Part Number STS5P3LLH6
PNEDA Part # STS5P3LLH6
Description MOSFET P-CH 30V 5A 8SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS5P3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS5P3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS5P3LLH6, STS5P3LLH6 Datasheet (Total Pages: 15, Size: 532.6 KB)
PDFSTS5P3LLH6 Datasheet Cover
STS5P3LLH6 Datasheet Page 2 STS5P3LLH6 Datasheet Page 3 STS5P3LLH6 Datasheet Page 4 STS5P3LLH6 Datasheet Page 5 STS5P3LLH6 Datasheet Page 6 STS5P3LLH6 Datasheet Page 7 STS5P3LLH6 Datasheet Page 8 STS5P3LLH6 Datasheet Page 9 STS5P3LLH6 Datasheet Page 10 STS5P3LLH6 Datasheet Page 11

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STS5P3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ H6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs56mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds639pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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