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BSC252N10NSFGATMA1

BSC252N10NSFGATMA1

For Reference Only

Part Number BSC252N10NSFGATMA1
PNEDA Part # BSC252N10NSFGATMA1
Description MOSFET N-CH 100V 40A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC252N10NSFGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC252N10NSFGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC252N10NSFGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.2A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 50V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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