Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
Records 3,829
Page 5/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 25A PPAK 1212-8 |
59,883 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 25A | 16.4mOhm @ 10A, 4.5V | 1V @ 250µA | 32nC @ 8V | 1220pF @ 10V | 23W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
|
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ON Semiconductor |
MOSFET 2N-CH 20V 5A 6-MICROFET |
112,710 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 54mOhm @ 5A, 4.5V | 1V @ 250µA | 7.3nC @ 4.5V | 500pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |
|
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|
Infineon Technologies |
MOSFET 2P-CH 30V 8A 8SOIC |
30,876 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Diodes Incorporated |
MOSFET 2P-CH 40V 6.9A 8SO |
22,230 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 40V | 6.9A | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | 1640pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 60V 5.3A 8-SOIC |
330,678 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58mOhm @ 4.3A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Vishay Siliconix |
MOSFET 2N-CH 20V 8A 8-SOIC |
306,222 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8A | 18mOhm @ 8.3A, 4.5V | 1.5V @ 250µA | 33nC @ 10V | 1200pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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ON Semiconductor |
MOSFET 2P-CH 30V 6.9A 8-SOIC |
354,678 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 22mOhm @ 6.9A, 10V | 3V @ 250µA | 40nC @ 10V | 1360pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Diodes Incorporated |
MOSFET 2P-CH 40V 4A 8SO |
22,446 |
|
- | 2 P-Channel (Dual) | Standard | 40V | 4A | 50mOhm @ 6A, 10V | 3V @ 250µA | 13.9nC @ 10V | 674pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 60V 20A TDSON-8 |
239,598 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1430pF @ 25V | 33W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
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|
Texas Instruments |
MOSFET 2N-CH 30V 15A 5PTAB |
12,932 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 15A | 16.3mOhm @ 8A, 8V | 1.9V @ 250µA | 5nC @ 4.5V | 564pF @ 15V | 4W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (3x2.5) |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC |
30,288 |
|
HEXFET® | N and P-Channel | Standard | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 30V 8.6A/7.3A 8-SO |
121,014 |
|
PowerTrench® | N and P-Channel | Logic Level Gate | 30V | 8.6A, 7.3A | 17mOhm @ 8.6A, 10V | 3V @ 250µA | 24nC @ 10V | 1205pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 30V 7A 8SOIC |
56,952 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 23mOhm @ 7A, 10V | 3V @ 250µA | 21nC @ 5V | 1233pF @ 15V | 900mW | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 30V 8A 8-SOIC |
92,844 |
|
TrenchFET® | 2 P-Channel (Dual) | Standard | 30V | 8A | 29mOhm @ 7.3A, 10V | 3V @ 250µA | 50nC @ 10V | 1350pF @ 15V | 5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Infineon Technologies |
MOSFET N/P-CH 55V 8-SOIC |
28,560 |
|
HEXFET® | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8-SOIC |
294,210 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Vishay Siliconix |
MOSFET 2P-CH 12V 6.7A 8-SOIC |
208,554 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 6.7A | 18mOhm @ 8.9A, 4.5V | 1V @ 350µA | 52nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Vishay Siliconix |
MOSFET 2P-CH 12V 6.7A 8SOIC |
143,496 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 6.7A | 18mOhm @ 8.9A, 4.5V | 1V @ 350µA | 52nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Infineon Technologies |
MOSFET 2N-CH 30V 8A 8DSO |
230,490 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15mOhm @ 9.3A, 10V | 2V @ 250µA | 17nC @ 10V | 1300pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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|
Vishay Siliconix |
MOSFET N/P-CH 20V 6.7A 8-TSSOP |
37,775 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 20V | 6.7A, 6.1A | 22mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 23nC @ 10V | 850pF @ 10V | 1.6W, 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
98,604 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Diodes Incorporated |
MOSFET 2N/2P-CH 30V 8-SOIC |
385,818 |
|
- | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 30V | 3.98A, 3.36A | 33mOhm @ 5A, 10V | 3V @ 250µA | 9nC @ 10V | 430pF @ 15V | 870mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Diodes Incorporated |
MOSFET 2N/2P-CH 60V 8-SOIC |
95,628 |
|
- | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 60V | 1.39A, 1.28A | 250mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | 166pF @ 40V | 870mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Diodes Incorporated |
MOSFET 2N/2P-CH 30V 8-SOIC |
18,876 |
|
- | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 30V | 2.17A, 1.64A | 125mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 870mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 60V 2.9A 8-SO |
95,532 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 60V | 2.9A | 105mOhm @ 2.9A, 10V | 3V @ 250µA | 23nC @ 10V | 1020pF @ 30V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
76,464 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 35mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | 1105pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 4.9A 8-TSSOP |
297,108 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 4.9A | 21mOhm @ 5.8A, 4.5V | 900mV @ 400µA | 28nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 30V 9.2A 8SOIC |
73,791 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 55V 4.7A 8-SOIC |
241,194 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 40V 9A/6.5A DPAK |
288,684 |
|
PowerTrench® | N and P-Channel | Logic Level Gate | 40V | 9A, 6.5A | 24mOhm @ 9A, 10V | 3V @ 250µA | 20nC @ 10V | 1000pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |