Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI6913DQ-T1-GE3

SI6913DQ-T1-GE3

For Reference Only

Part Number SI6913DQ-T1-GE3
PNEDA Part # SI6913DQ-T1-GE3
Description MOSFET 2P-CH 12V 4.9A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 297,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6913DQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6913DQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6913DQ-T1-GE3, SI6913DQ-T1-GE3 Datasheet (Total Pages: 11, Size: 221.11 KB)
PDFSI6913DQ-T1-E3 Datasheet Cover
SI6913DQ-T1-E3 Datasheet Page 2 SI6913DQ-T1-E3 Datasheet Page 3 SI6913DQ-T1-E3 Datasheet Page 4 SI6913DQ-T1-E3 Datasheet Page 5 SI6913DQ-T1-E3 Datasheet Page 6 SI6913DQ-T1-E3 Datasheet Page 7 SI6913DQ-T1-E3 Datasheet Page 8 SI6913DQ-T1-E3 Datasheet Page 9 SI6913DQ-T1-E3 Datasheet Page 10 SI6913DQ-T1-E3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI6913DQ-T1-GE3 Datasheet
  • where to find SI6913DQ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI6913DQ-T1-GE3
  • SI6913DQ-T1-GE3 PDF Datasheet
  • SI6913DQ-T1-GE3 Stock

  • SI6913DQ-T1-GE3 Pinout
  • Datasheet SI6913DQ-T1-GE3
  • SI6913DQ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI6913DQ-T1-GE3 Price
  • SI6913DQ-T1-GE3 Distributor

SI6913DQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.9A
Rds On (Max) @ Id, Vgs21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

DMT3009LDT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A

Rds On (Max) @ Id, Vgs

11.1mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 15V

Power - Max

1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-VDFN Exposed Pad

Supplier Device Package

V-DFN3030-8 (Type K)

DMTH4007SPDQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

14.2A

Rds On (Max) @ Id, Vgs

8.6mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2026pF @ 30V

Power - Max

2.6W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PowerDI5060-8

SP8J2TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

56mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

JAN2N7334

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/597

FET Type

4 N-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A

Rds On (Max) @ Id, Vgs

700mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

14-DIP (0.300", 7.62mm)

Supplier Device Package

MO-036AB

IRF7755TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A

Rds On (Max) @ Id, Vgs

51mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1090pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

Recently Sold

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

MAX811SEUS-T

MAX811SEUS-T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

NUP2201MR6T1G

NUP2201MR6T1G

ON Semiconductor

TVS DIODE 5V 20V 6TSOP

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363