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ZXMHC6A07N8TC

ZXMHC6A07N8TC

For Reference Only

Part Number ZXMHC6A07N8TC
PNEDA Part # ZXMHC6A07N8TC
Description MOSFET 2N/2P-CH 60V 8-SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 95,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMHC6A07N8TC Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMHC6A07N8TC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMHC6A07N8TC, ZXMHC6A07N8TC Datasheet (Total Pages: 11, Size: 732.45 KB)
PDFZXMHC6A07N8TC Datasheet Cover
ZXMHC6A07N8TC Datasheet Page 2 ZXMHC6A07N8TC Datasheet Page 3 ZXMHC6A07N8TC Datasheet Page 4 ZXMHC6A07N8TC Datasheet Page 5 ZXMHC6A07N8TC Datasheet Page 6 ZXMHC6A07N8TC Datasheet Page 7 ZXMHC6A07N8TC Datasheet Page 8 ZXMHC6A07N8TC Datasheet Page 9 ZXMHC6A07N8TC Datasheet Page 10 ZXMHC6A07N8TC Datasheet Page 11

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ZXMHC6A07N8TC Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N and 2 P-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.39A, 1.28A
Rds On (Max) @ Id, Vgs250mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
Power - Max870mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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