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SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3

For Reference Only

Part Number SI6562CDQ-T1-GE3
PNEDA Part # SI6562CDQ-T1-GE3
Description MOSFET N/P-CH 20V 6.7A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 37,775
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6562CDQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6562CDQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6562CDQ-T1-GE3, SI6562CDQ-T1-GE3 Datasheet (Total Pages: 17, Size: 249.73 KB)
PDFSI6562CDQ-T1-GE3 Datasheet Cover
SI6562CDQ-T1-GE3 Datasheet Page 2 SI6562CDQ-T1-GE3 Datasheet Page 3 SI6562CDQ-T1-GE3 Datasheet Page 4 SI6562CDQ-T1-GE3 Datasheet Page 5 SI6562CDQ-T1-GE3 Datasheet Page 6 SI6562CDQ-T1-GE3 Datasheet Page 7 SI6562CDQ-T1-GE3 Datasheet Page 8 SI6562CDQ-T1-GE3 Datasheet Page 9 SI6562CDQ-T1-GE3 Datasheet Page 10 SI6562CDQ-T1-GE3 Datasheet Page 11

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SI6562CDQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.7A, 6.1A
Rds On (Max) @ Id, Vgs22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 10V
Power - Max1.6W, 1.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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