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IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

For Reference Only

Part Number IPG20N10S4L35ATMA1
PNEDA Part # IPG20N10S4L35ATMA1
Description MOSFET 2N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 76,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPG20N10S4L35ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPG20N10S4L35ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IPG20N10S4L35ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1105pF @ 25V
Power - Max43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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