Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 19/2164

Part Number	Description	In Stock
HN2A01FE-GR(TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 800MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock2,484
HN2A01FE-Y(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock5,328
HN2A01FU-GR(TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6-PLN Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,264
HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock27,552
HN2C01FE-GR(T5L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock4,518
HN2C01FEYTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock5,022
HN2C01FU-GR(T5L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock26,982
HN2C01FU-Y(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock22,962
HN3A51F(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 120V 0.1A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock7,974
HN3C51F-BL(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.1A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock2,790
HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.1A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock6,336
HN4A06J(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 120V 0.1A SMV Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock2,502
HN4A51JTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 120V 0.1A SMV Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock29,532
HN4A56JU(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2 PNP 50V 150MA 5TSSOP Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	In Stock8,604
HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A ESV PLN Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP (Emitter Coupled) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	In Stock2,628
HN4B04J(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 30V 0.5A SMV Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock22,254
HN4C06J-BL(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2 NPN 120V 100MA SC74A Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Common Emitter Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock2,592
HN4C51J(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.1A SMV Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Common Base Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock2,610
IMT17-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.5A SOT26 Manufacturer: Diodes Incorporated Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock24,720
IMT17T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock7,794
IMT17T208 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock7,866
IMT18T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 12V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 300mW Frequency - Transition: 260MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock2,286
IMT1AT108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock7,902
IMT1AT110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock52,602
IMT2AT108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock22,590
IMT3AT108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock6,120
IMT4-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 120V 0.05A SOT26 Manufacturer: Diodes Incorporated Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 225mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock5,472
IMT4T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 120V 0.05A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock42,102
IMX17T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock3,312
IMX17T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock7,254

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