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HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F

For Reference Only

Part Number HN3C51F-GR(TE85L,F
PNEDA Part # HN3C51F-GR-TE85L-F
Description TRANS 2NPN 120V 0.1A SM6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HN3C51F-GR(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberHN3C51F-GR(TE85L,F
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays
Datasheet
HN3C51F-GR(TE85L, HN3C51F-GR(TE85L Datasheet (Total Pages: 4, Size: 339.59 KB)
PDFHN3C51F-GR(TE85L Datasheet Cover
HN3C51F-GR(TE85L Datasheet Page 2 HN3C51F-GR(TE85L Datasheet Page 3 HN3C51F-GR(TE85L Datasheet Page 4

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HN3C51F-GR(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max300mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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