Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 18/2164

Part Number	Description	In Stock
HCT700 TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: -	In Stock2,160
HCT700TX TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: -	In Stock7,254
HCT700TXV TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: -	In Stock5,544
HN1A01FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock3,600
HN1A01FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock60,828
HN1A01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock3,490
HN1A01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6-PLN Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,660
HN1A01FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,120
HN1A01F-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock24,414
HN1B01FDW1T1 ON Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.2A SC74 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 380mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	In Stock5,616
HN1B01FDW1T1G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.2A SC74 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 380mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	In Stock53,316
HN1B01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock5,076
HN1B01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6-PLN Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW, 210mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock2,844
HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock4,266
HN1B04FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock71,742
HN1B04FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock4,104
HN1B04F(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 30V 0.5A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock7,866
HN1B04FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,444
HN1B04FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays X34 PB-F US6 PLN (LF) TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock23,454
HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock3,654
HN1C01FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock35,094
HN1C01FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock8,370
HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 800MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock5,310
HN1C01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,390
HN1C01FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays NPN + NPN IND. TRANSISTOR VCEO50 Manufacturer: Toshiba Semiconductor and Storage Series: * Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,508
HN1C01FU-Y(T5L,F,T Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock3,834
HN1C01FYTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock24,414
HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.3A SM6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 300mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock3,042
HN1C03FU-A(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.3A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Power - Max: 200mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock2,790
HN1C03FU-B,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays NPN + NPN IND. TRANSISTOR VCEO20 Manufacturer: Toshiba Semiconductor and Storage Series: * Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,984

«
‹
1
...
15
16
17
18 (current)
19
20
21
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message