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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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JANTXV2N2920L
JANTXV2N2920L

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A TO78

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/355
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock5,562
JANTXV2N2920U
JANTXV2N2920U

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.03A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/355
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
In Stock4,104
JANTXV2N3810
JANTXV2N3810

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A TO78

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock8,082
JANTXV2N3810L
JANTXV2N3810L

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock8,316
JANTXV2N3810U
JANTXV2N3810U

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock4,140
JANTXV2N3811
JANTXV2N3811

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A TO78

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock2,934
JANTXV2N3811L
JANTXV2N3811L

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock6,156
JANTXV2N3811U
JANTXV2N3811U

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.05A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/336
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock7,290
JANTXV2N5794
JANTXV2N5794

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 40V 0.6A TO-78

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/495
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock5,490
JANTXV2N6987
JANTXV2N6987

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A TO116

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/558
  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: -
In Stock2,412
JANTXV2N6988
JANTXV2N6988

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 0.6A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/558
  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-Flatpack
  • Supplier Device Package: 14-Flatpack
In Stock3,060
JANTXV2N6989
JANTXV2N6989

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A TO116

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/559
  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
In Stock8,784
JANTXV2N6990
JANTXV2N6990

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A 14PIN

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/559
  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-Flatpack
  • Supplier Device Package: 14-Flatpack
In Stock8,856
L603C
L603C

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 90V 0.4A 18DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1.8W
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 18-DIP
In Stock5,382
L604C
L604C

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 90V 0.4A 18DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1.8W
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,344
L6221AD
L6221AD

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.8A 20SOIC

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
In Stock5,742
L6221AD013TR
L6221AD013TR

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.8A 20SOIC

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
In Stock3,544
L6221AS
L6221AS

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.8A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 16-PowerDIP
In Stock6,372
L6221CD
L6221CD

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 1.2A 20SOIC

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
In Stock5,868
L6221CD013TR
L6221CD013TR

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 1.2A 20SOIC

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
In Stock6,012
LBN150B01-7
LBN150B01-7

Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 0.2A SOT26

  • Manufacturer: Diodes Incorporated
  • Series: -
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
In Stock4,392
LBN150B02-7
LBN150B02-7

Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

MOSFET ARRAY SMD

  • Manufacturer: Diodes Incorporated
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,670
LM394CH/NOPB
LM394CH/NOPB

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V 0.02A TO99-6

  • Manufacturer:
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-99-6 Metal Can
  • Supplier Device Package: TO-99-6
In Stock4,518
MAT01AH
MAT01AH

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 45V 0.025A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 300nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock5,922
MAT01AHZ
MAT01AHZ

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 45V 0.025A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 300nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock6,120
MAT01GH
MAT01GH

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 45V 0.025A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock5,904
MAT01GHZ
MAT01GHZ

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 45V 0.025A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock12,816
MAT03EH
MAT03EH

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 36V 0.02A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock7,290
MAT03EHZ
MAT03EHZ

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 36V 0.02A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock7,506
MAT03FH
MAT03FH

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 36V 0.02A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock2,754