Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 20/2164

Part Number	Description	In Stock
IMX1T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock6,480
IMX1T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock364,914
IMX25T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.3A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V Power - Max: 300mW Frequency - Transition: 35MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock7,416
IMX2T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock24,198
IMX3T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock8,856
IMX4T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.05A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V Power - Max: 300mW Frequency - Transition: 1.5GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock4,428
IMX5T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 11V 0.05A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 11V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Power - Max: 300mW Frequency - Transition: 3.2GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock3,240
IMX8-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.05A SOT26 Manufacturer: Diodes Incorporated Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock8,640
IMX8-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.05A SOT26 Manufacturer: Diodes Incorporated Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock5,256
IMX8T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 120V 0.05A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock8,280
IMX9T110 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 10mA, 3V Power - Max: 300mW Frequency - Transition: 350MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock50,538
IMZ1AT108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz, 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock116,628
IMZ2AT108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 180MHz, 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock5,742
IMZ4T108 Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 32V 0.5A 6SMT Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 250MHz, 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	In Stock6,786
JAN2N2060L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.5A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/270 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 2.12W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,048
JAN2N2919L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,866
JAN2N2919U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock7,578
JAN2N2920L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,776
JAN2N2920U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock3,942
JAN2N3810 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,192
JAN2N3810L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,752
JAN2N3810U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock8,802
JAN2N3811 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock2,592
JAN2N3811L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,822
JAN2N3811U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,384
JAN2N6987 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4PNP 60V 0.6A TO116 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/558 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	In Stock7,812
JAN2N6988 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4PNP 60V 0.6A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/558 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	In Stock5,490
JAN2N6989 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A TO116 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/559 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	In Stock8,928
JAN2N6990 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A 14PIN Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/559 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	In Stock7,920
JANS2N2920 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO-18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock6,444

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