Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1885/2164

Part Number	Description	In Stock
STW30NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 27A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,088
STW30NM60D STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,418
STW30NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,384
STW30NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,344
STW31N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,384
STW32N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock12,984
STW32NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 500V 22A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock13,140
STW33N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock15,732
STW33N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock18,852
STW33N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single NCHANNEL 600 V 105 MOHM TYP. 26 Manufacturer: STMicroelectronics Series: MDmesh™ M6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,460
STW34N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 28A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock21,588
STW34NB20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 34A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,298
STW34NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock18,060
STW34NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,838
STW35N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V FET Feature: - Power Dissipation (Max): 210W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock14,604
STW35N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ M2-EP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock4,410
STW35N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 27A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock21,444
STW36N55M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 550V 33A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,980
STW36N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 30A TO247 Manufacturer: STMicroelectronics Series: MDmesh™ M6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.3nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,800
STW36NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V FET Feature: - Power Dissipation (Max): 210W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,228
STW36NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock4,266
STW37N60DM2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V FET Feature: - Power Dissipation (Max): 210W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock18,240
STW38N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,456
STW38N65M5-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO247-4L Manufacturer: STMicroelectronics Series: MDmesh™ M5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock6,072
STW38NB20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 38A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,794
STW3N150 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,928
STW3N170 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1700V 2.6A TO247-3 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 160mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,554
STW40N20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 40A TO-247 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,940
STW40N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock19,068
STW40N60M2-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,824

«
‹
1
...
1882
1883
1884
1885 (current)
1886
1887
1888
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message