Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 1882/2164

Part Number	Description	In Stock
STW13NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,574
STW14NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock10,716
STW14NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13.5A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,568
STW14NM50 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 14A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V FET Feature: - Power Dissipation (Max): 175W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,652
STW14NM50FD STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,920
STW14NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,118
STW150NF55 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 120A TO-247 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,974
STW15N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 800V 14A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,912
STW15N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 12A TO247 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,132
STW15NB50 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14.6A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,022
STW15NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,754
STW15NK90Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 15A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock14,304
STW15NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock13,884
STW15NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock9,996
STW160N75F3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO-247 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 25V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,568
STW16N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,816
STW16NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 14A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,708
STW16NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 15A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,304
STW17N62K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 15A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,600
STW18N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 100V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock18,936
STW18N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,218
STW18N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 650V 15A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock19,512
STW18NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,940
STW18NK80Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 19A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,538
STW18NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,850
STW18NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 50V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,140
STW18NM80 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,212
STW19NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock10,560
STW19NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,544
STW19NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15.5A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 7.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,698

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