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STW38N65M5-4

STW38N65M5-4

For Reference Only

Part Number STW38N65M5-4
PNEDA Part # STW38N65M5-4
Description MOSFET N-CH 650V 30A TO247-4L
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,072
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW38N65M5-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW38N65M5-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW38N65M5-4, STW38N65M5-4 Datasheet (Total Pages: 13, Size: 386.7 KB)
PDFSTW38N65M5-4 Datasheet Cover
STW38N65M5-4 Datasheet Page 2 STW38N65M5-4 Datasheet Page 3 STW38N65M5-4 Datasheet Page 4 STW38N65M5-4 Datasheet Page 5 STW38N65M5-4 Datasheet Page 6 STW38N65M5-4 Datasheet Page 7 STW38N65M5-4 Datasheet Page 8 STW38N65M5-4 Datasheet Page 9 STW38N65M5-4 Datasheet Page 10 STW38N65M5-4 Datasheet Page 11

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STW38N65M5-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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