Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW40N60M2

STW40N60M2

For Reference Only

Part Number STW40N60M2
PNEDA Part # STW40N60M2
Description MOSFET N-CH 600V 34A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 19,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW40N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW40N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW40N60M2, STW40N60M2 Datasheet (Total Pages: 21, Size: 1,116.91 KB)
PDFSTW40N60M2-4 Datasheet Cover
STW40N60M2-4 Datasheet Page 2 STW40N60M2-4 Datasheet Page 3 STW40N60M2-4 Datasheet Page 4 STW40N60M2-4 Datasheet Page 5 STW40N60M2-4 Datasheet Page 6 STW40N60M2-4 Datasheet Page 7 STW40N60M2-4 Datasheet Page 8 STW40N60M2-4 Datasheet Page 9 STW40N60M2-4 Datasheet Page 10 STW40N60M2-4 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW40N60M2 Datasheet
  • where to find STW40N60M2
  • STMicroelectronics

  • STMicroelectronics STW40N60M2
  • STW40N60M2 PDF Datasheet
  • STW40N60M2 Stock

  • STW40N60M2 Pinout
  • Datasheet STW40N60M2
  • STW40N60M2 Supplier

  • STMicroelectronics Distributor
  • STW40N60M2 Price
  • STW40N60M2 Distributor

STW40N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

IRF3709

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2672pF @ 16V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FQI27N25TU-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

25.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

NTH027N65S3F_F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27.4mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

5V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs

259nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7690pF @ 400V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

97mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 15V

FET Feature

-

Power Dissipation (Max)

270mW (Ta), 1.92W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323-3

Package / Case

SC-70, SOT-323

BUK92150-55A,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

125mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

338pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

2920L300/15DR

2920L300/15DR

Littelfuse

PTC RESET FUSE 15V 3A 2920

WSL25125L000FTA

WSL25125L000FTA

Vishay Dale

WSL-2512 .005 1% R86

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23

MC33990D

MC33990D

NXP

IC TRANSCEIVER HALF 1/1 8SOIC

0154007.DR

0154007.DR

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

MT48LC4M16A2P-75 IT:G

MT48LC4M16A2P-75 IT:G

Micron Technology Inc.

IC DRAM 64M PARALLEL 54TSOP

APE30024

APE30024

Panasonic Electric Works

RELAY GEN PURPOSE SPDT 6A 24V

MBR0530T1G

MBR0530T1G

ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

ATMEGA48PA-AU

ATMEGA48PA-AU

Microchip Technology

IC MCU 8BIT 4KB FLASH 32TQFP

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

TAJA106K016RNJ

TAJA106K016RNJ

CAP TANT 10UF 10% 16V 1206

SMBJ36A-13-F

SMBJ36A-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB