Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1887/2164

Part Number	Description	In Stock
STW55NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 51A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,772
STW55NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 51A TO-247 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock9,420
STW56N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock12,408
STW56N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247 Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock2,574
STW56N60M2-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247-4 Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock8,220
STW56N65DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 48A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock17,364
STW56N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 49A TO247 Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V FET Feature: - Power Dissipation (Max): 358W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock14,880
STW56N65M2-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V I2PAKFP Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V FET Feature: - Power Dissipation (Max): 358W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock5,904
STW56NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 45A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,144
STW57N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 42A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock21,594
STW57N65M5-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 650V 42A TO247-4 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock6,876
STW58N60DM2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,920
STW58N65DM2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 48A Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock16,704
STW5NK100Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 3.5A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock16,812
STW60N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 46A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 100V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock18,804
STW60NE10 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A TO-247 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,646
STW60NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 500V 68A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 100V FET Feature: - Power Dissipation (Max): 446W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock12,576
STW62N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247 Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock14,424
STW62NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 65A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 100V FET Feature: - Power Dissipation (Max): 450W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,396
STW63N65DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: FDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 65A Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 145nC @ 100V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock5,976
STW65N60DM6 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V, 0.084 OHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ DM6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,226
STW65N65DM2AG STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 60A Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 100V FET Feature: - Power Dissipation (Max): 446W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock9,372
STW65N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 46A Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 100V FET Feature: - Power Dissipation (Max): 446W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock14,928
STW68N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 600V M6 POWER MOSFET Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock11,148
STW69N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 58A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock15,876
STW69N65M5-4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 58A TO-247-4 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock9,936
STW6N120K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 6A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,128
STW6N90K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 900 V, 2.1 OHM TYP., 3 Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,650
STW6N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 9A TO-274 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock12,120
STW70N10F4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 65A TO-247 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,024

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