Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
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Records 64,903

Page 1809/2164

Part Number	Description	In Stock
SSM3H137TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 119pF @ 10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock45,324
SSM3J09FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock53,628
SSM3J108TU(TE85L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 158mOhm @ 800mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock2,268
SSM3J112TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 PB-F UFM S-MOS (LF) TRANSIST Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 86pF @ 15V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock5,454
SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A UFM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 149mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock5,580
SSM3J114TU(TE85L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A UFM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 149mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock3,598
SSM3J117TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 2A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock8,622
SSM3J118TU(TE85L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.4A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock6,714
SSM3J120TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock3,384
SSM3J129TU(TE85L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.6A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock5,382
SSM3J130TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.4A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock278,262
SSM3J132TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 PB-F SMALL LOW ON RESISTANCE Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock42,684
SSM3J133TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.5A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock100,122
SSM3J134TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL PCH LOW ON RESISTANCE MOSF Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock55,236
SSM3J135TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS-20 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,726
SSM3J140TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock28,158
SSM3J143TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock21,612
SSM3J144TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock44,556
SSM3J145TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock24,846
SSM3J14TTE85LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.7A TSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,192
SSM3J15CT(TPL3) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.1A CST3 Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock8,712
SSM3J15F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,568
SSM3J15FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,290
SSM3J15FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.1A USM Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	In Stock5,652
SSM3J15FV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.1A VESM Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock141,240
SSM3J168F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 400MA S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,142
SSM3J16CT(TPL3) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A CST3 Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 3V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock5,130
SSM3J304T(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A TSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 127mOhm @ 1A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,384
SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A TSM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,628
SSM3J307T(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5A TSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,130

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