Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

For Reference Only

Part Number SSM3J129TU(TE85L)
PNEDA Part # SSM3J129TU-TE85L
Description MOSFET P-CH 20V 4.6A UFM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,382
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM3J129TU(TE85L) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM3J129TU(TE85L)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM3J129TU(TE85L) Datasheet
  • where to find SSM3J129TU(TE85L)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM3J129TU(TE85L)
  • SSM3J129TU(TE85L) PDF Datasheet
  • SSM3J129TU(TE85L) Stock

  • SSM3J129TU(TE85L) Pinout
  • Datasheet SSM3J129TU(TE85L)
  • SSM3J129TU(TE85L) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM3J129TU(TE85L) Price
  • SSM3J129TU(TE85L) Distributor

SSM3J129TU(TE85L) Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSV
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUFM
Package / Case3-SMD, Flat Leads

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

70.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

153nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9900pF @ 50V

FET Feature

-

Power Dissipation (Max)

63.8W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack, Isolated Tab

FDV303N_NB9U008

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

680mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

450mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Vgs (Max)

8V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

JAN2N7224

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/592

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

81mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

HRF3205

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 59A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRFH7184ATRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

LT8609SEV#PBF

LT8609SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16LQFN

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

XC7Z020-1CLG400I

XC7Z020-1CLG400I

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

B1250T

B1250T

Bourns

FUSE BRD MNT 1.25A 600VAC 2SMD

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

LTM8026IV#PBF

LTM8026IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 1.2-24V 120W

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

HCS3920FTL500

HCS3920FTL500

Stackpole Electronics

RES 500 UOHM 1% 5W 3920

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

BSS123

BSS123

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23