SSM3J108TU(TE85L)
For Reference Only
| Part Number | SSM3J108TU(TE85L) |
| PNEDA Part # | SSM3J108TU-TE85L |
| Description | MOSFET P-CH 20V 1.8A UFM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,268 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SSM3J108TU(TE85L) Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | SSM3J108TU(TE85L) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SSM3J108TU(TE85L) Datasheet
- where to find SSM3J108TU(TE85L)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage SSM3J108TU(TE85L)
- SSM3J108TU(TE85L) PDF Datasheet
- SSM3J108TU(TE85L) Stock
- SSM3J108TU(TE85L) Pinout
- Datasheet SSM3J108TU(TE85L)
- SSM3J108TU(TE85L) Supplier
- Toshiba Semiconductor and Storage Distributor
- SSM3J108TU(TE85L) Price
- SSM3J108TU(TE85L) Distributor
SSM3J108TU(TE85L) Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs | 158mOhm @ 800mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | UFM |
| Package / Case | 3-SMD, Flat Leads |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 400A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 5.6V @ 106.8mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 17000pF @ 10V FET Feature - Power Dissipation (Max) 1570W (Tc) Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package Module Package / Case Module |
Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaSGT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4940pF @ 40V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN-EP (5x6) Package / Case 8-PowerSMD, Flat Leads |
Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 310mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 55W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 3.65A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
