Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1810/2164

Part Number	Description	In Stock
SSM3J321T(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.2A TSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,346
SSM3J325F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock28,578
SSM3J327R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A SOT23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock209,424
SSM3J328R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A SOT23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock376,188
SSM3J331R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P CH 20V 4A SOT-23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock29,940
SSM3J332R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P CH 30V 6A 2-3Z1A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock258,174
SSM3J334R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P CH 30V 4A SOT-23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock88,086
SSM3J338R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6A SOT23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock596,922
SSM3J340R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock54,216
SSM3J351R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 3.5A SOT-23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock3,870
SSM3J352F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock29,214
SSM3J353F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 PB-F SMALL LOW ON RESISTANE Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 159pF @ 15V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,274
SSM3J355R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL LOW ON RESISTANCE MOSFET Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock92,052
SSM3J356R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2A SOT-23F Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock619,464
SSM3J358R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL LOW ON RESISTANCE MOSFET Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 8V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1331pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock29,532
SSM3J35AFS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock4,194
SSM3J35AMFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock3,258
SSM3J35CTC,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.25A CST3C Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SOT-1123	In Stock105,312
SSM3J35CT,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 100MA CST3 Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock3,438
SSM3J35MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A VESM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock6,822
SSM3J36FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.33A SSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock8,586
SSM3J36MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.33A VESM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock7,164
SSM3J36TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-2 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock50,580
SSM3J371R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock58,908
SSM3J372R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Vgs (Max): +12V, -6V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock3,798
SSM3J374R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock29,610
SSM3J375F,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock46,128
SSM3J377R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock27,726
SSM3J378R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): +6V, -8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock3,222
SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A CST3B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3B Package / Case: 3-SMD, No Lead	In Stock7,200

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