Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM3J114TU(T5L,T)

SSM3J114TU(T5L,T)

For Reference Only

Part Number SSM3J114TU(T5L,T)
PNEDA Part # SSM3J114TU-T5L-T
Description MOSFET P-CH 20V 1.8A UFM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM3J114TU(T5L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM3J114TU(T5L,T)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM3J114TU(T5L,T) Datasheet
  • where to find SSM3J114TU(T5L,T)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM3J114TU(T5L,T)
  • SSM3J114TU(T5L,T) PDF Datasheet
  • SSM3J114TU(T5L,T) Stock

  • SSM3J114TU(T5L,T) Pinout
  • Datasheet SSM3J114TU(T5L,T)
  • SSM3J114TU(T5L,T) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM3J114TU(T5L,T) Price
  • SSM3J114TU(T5L,T) Distributor

SSM3J114TU(T5L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs149mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds331pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUFM
Package / Case3-SMD, Flat Leads

The Products You May Be Interested In

STD95N4LF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQD2P40TF_F080

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

1.56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5Ohm @ 780mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RS1P600BETB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

17.5A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.7mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

GigaMOS™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

420A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

670nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

47000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1070W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

NTTFS5811NLTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

Recently Sold

AP1533SG-13

AP1533SG-13

Diodes Incorporated

IC REG BUCK ADJUSTABLE 1.8A 8SOP

HD64F3664FPV

HD64F3664FPV

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 64LQFP

TLMG3100-GS08

TLMG3100-GS08

Vishay Semiconductor Opto Division

LED GREEN CLEAR 2PLCC SMD

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

PC357N4J000F

PC357N4J000F

SHARP/Socle Technology

OPTOISO 3.75KV TRANS 4-MINI-FLAT

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

TAJC226K025RNJ

TAJC226K025RNJ

CAP TANT 22UF 10% 25V 2312

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE