Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1635/2164

Part Number	Description	In Stock
NVMFS5C604NLWFAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 287A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock12,588
NVMFS5C604NLWFAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 287A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,734
NVMFS5C604NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,752
NVMFS5C604NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,526
NVMFS5C612NLAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 38A 250A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,500
NVMFS5C612NLAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 38A 250A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock7,326
NVMFS5C612NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 36A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,592
NVMFS5C612NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 36A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,028
NVMFS5C612NLWFAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 38A 250A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,734
NVMFS5C612NLWFAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 38A 250A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,034
NVMFS5C612NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 36A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,034
NVMFS5C612NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 36A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock6,696
NVMFS5C628NLAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A 150A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock3,096
NVMFS5C628NLAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A 150A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock7,308
NVMFS5C628NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,142
NVMFS5C628NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,892
NVMFS5C628NLWFAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A 150A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock6,318
NVMFS5C628NLWFAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A 150A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,934
NVMFS5C628NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,610
NVMFS5C628NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,568
NVMFS5C638NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single 60V 3.0 MOHM T6 S08FL SIN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V FET Feature: - Power Dissipation (Max): 4W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock250,518
NVMFS5C638NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single 60V 3.0 MOHM T6 S08FL SIN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V FET Feature: - Power Dissipation (Max): 4W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock8,298
NVMFS5C645NLAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A 100A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock7,002
NVMFS5C645NLAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A 100A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock3,762
NVMFS5C645NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A 100A 5DFN Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock3,978
NVMFS5C645NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN5 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock3,762
NVMFS5C645NLWFAFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN5 WETTABLE Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock8,568
NVMFS5C645NLWFAFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A SO8FL Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock6,336
NVMFS5C645NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN5 WETTABLE Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock7,866
NVMFS5C645NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN5 WETTABLE Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,286

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