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NVMFS5C645NLAFT3G

NVMFS5C645NLAFT3G

For Reference Only

Part Number NVMFS5C645NLAFT3G
PNEDA Part # NVMFS5C645NLAFT3G
Description MOSFET N-CH 60V 22A 100A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,762
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5C645NLAFT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5C645NLAFT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5C645NLAFT3G, NVMFS5C645NLAFT3G Datasheet (Total Pages: 7, Size: 179.68 KB)
PDFNVMFS5C645NLWFT3G Datasheet Cover
NVMFS5C645NLWFT3G Datasheet Page 2 NVMFS5C645NLWFT3G Datasheet Page 3 NVMFS5C645NLWFT3G Datasheet Page 4 NVMFS5C645NLWFT3G Datasheet Page 5 NVMFS5C645NLWFT3G Datasheet Page 6 NVMFS5C645NLWFT3G Datasheet Page 7

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NVMFS5C645NLAFT3G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 50V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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