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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
Quantity
NVMFS5C646NLAFT1G
NVMFS5C646NLAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A 93A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,472
NVMFS5C646NLAFT3G
NVMFS5C646NLAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A 93A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock5,112
NVMFS5C646NLT1G
NVMFS5C646NLT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock3,870
NVMFS5C646NLT3G
NVMFS5C646NLT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock5,850
NVMFS5C646NLWFAFT1G
NVMFS5C646NLWFAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A 93A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,326
NVMFS5C646NLWFAFT3G
NVMFS5C646NLWFAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A 93A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,114
NVMFS5C646NLWFT1G
NVMFS5C646NLWFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock5,094
NVMFS5C646NLWFT3G
NVMFS5C646NLWFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock5,220
NVMFS5C670NLAFT1G
NVMFS5C670NLAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 17A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,082
NVMFS5C670NLAFT3G
NVMFS5C670NLAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 17A 71A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,524
NVMFS5C670NLT1G
NVMFS5C670NLT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock8,244
NVMFS5C670NLT3G
NVMFS5C670NLT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock3,474
NVMFS5C670NLWFAFT1G
NVMFS5C670NLWFAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 17A 71A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock27,696
NVMFS5C670NLWFAFT3G
NVMFS5C670NLWFAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 17A 71A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,520
NVMFS5C670NLWFT1G
NVMFS5C670NLWFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock2,988
NVMFS5C670NLWFT3G
NVMFS5C670NLWFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock6,678
NVMFS5C673NLAFT1G
NVMFS5C673NLAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 50A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock4,410
NVMFS5C673NLAFT3G
NVMFS5C673NLAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 50A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,146
NVMFS5C673NLT1G
NVMFS5C673NLT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock5,832
NVMFS5C673NLT3G
NVMFS5C673NLT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock2,826
NVMFS5C673NLWFAFT1G
NVMFS5C673NLWFAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 50A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,196
NVMFS5C673NLWFAFT3G
NVMFS5C673NLWFAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 50A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock4,068
NVMFS5C673NLWFT1G
NVMFS5C673NLWFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock5,598
NVMFS5C673NLWFT3G
NVMFS5C673NLWFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V SO8FL

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
In Stock4,680
NVMFS5C677NLT1G
NVMFS5C677NLT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V S08FL SINGLE

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock8,964
NVMFS5C677NLWFT1G
NVMFS5C677NLWFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V S08FL SINGLE

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock3,528
NVMFS5C680NLT1G
NVMFS5C680NLT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V S08FL SINGLE

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,470
NVMFS5C680NLWFT1G
NVMFS5C680NLWFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V S08FL SINGLE

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock2,826
NVMFS5C682NLAFT1G
NVMFS5C682NLAFT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 8.8A 25A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock6,660
NVMFS5C682NLAFT3G
NVMFS5C682NLAFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 8.8A 25A 5DFN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
In Stock7,722