NVMFS5C612NLWFT3G
For Reference Only
| Part Number | NVMFS5C612NLWFT3G |
| PNEDA Part # | NVMFS5C612NLWFT3G |
| Description | MOSFET N-CH 60V 36A SO8FL |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,696 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NVMFS5C612NLWFT3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NVMFS5C612NLWFT3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVMFS5C612NLWFT3G Datasheet
- where to find NVMFS5C612NLWFT3G
- ON Semiconductor
- ON Semiconductor NVMFS5C612NLWFT3G
- NVMFS5C612NLWFT3G PDF Datasheet
- NVMFS5C612NLWFT3G Stock
- NVMFS5C612NLWFT3G Pinout
- Datasheet NVMFS5C612NLWFT3G
- NVMFS5C612NLWFT3G Supplier
- ON Semiconductor Distributor
- NVMFS5C612NLWFT3G Price
- NVMFS5C612NLWFT3G Distributor
NVMFS5C612NLWFT3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 235A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 83.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3740pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 52W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (3x3.3) Package / Case 8-PowerVDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88/SC70-6/SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V FET Feature Super Junction Power Dissipation (Max) 29.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |
