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NVMFS5C612NLAFT3G

NVMFS5C612NLAFT3G

For Reference Only

Part Number NVMFS5C612NLAFT3G
PNEDA Part # NVMFS5C612NLAFT3G
Description MOSFET N-CH 60V 38A 250A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 8 - Nov 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5C612NLAFT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5C612NLAFT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5C612NLAFT3G, NVMFS5C612NLAFT3G Datasheet (Total Pages: 6, Size: 129.83 KB)
PDFNVMFS5C612NLWFT1G Datasheet Cover
NVMFS5C612NLWFT1G Datasheet Page 2 NVMFS5C612NLWFT1G Datasheet Page 3 NVMFS5C612NLWFT1G Datasheet Page 4 NVMFS5C612NLWFT1G Datasheet Page 5 NVMFS5C612NLWFT1G Datasheet Page 6

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NVMFS5C612NLAFT3G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6660pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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