Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1629/2164

Part Number	Description	In Stock
NVMFS4C310NWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TRENCH Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,516
NVMFS4C310NWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TRENCH Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,858
NVMFS5113PLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 64A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock23,718
NVMFS5113PLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single NFET SO8FL 60V 69A 16MOHM Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock8,856
NVMFS5826NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 26A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,230
NVMFS5826NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 26A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,976
NVMFS5826NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 26A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock3,096
NVMFS5826NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 26A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,502
NVMFS5830NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 185A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,406
NVMFS5830NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 185A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,604
NVMFS5830NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 172A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,356
NVMFS5830NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 172A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,788
NVMFS5832NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock16,446
NVMFS5832NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,964
NVMFS5832NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock7,974
NVMFS5832NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,436
NVMFS5833NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1714pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,076
NVMFS5833NT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1714pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock7,902
NVMFS5833NWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1714pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock2,610
NVMFS5833NWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1714pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,158
NVMFS5834NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock14,166
NVMFS5834NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock3,654
NVMFS5834NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock16,590
NVMFS5834NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,652
NVMFS5844NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 11.2A SO-8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock8,208
NVMFS5844NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock5,094
NVMFS5844NLWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 61A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock5,580
NVMFS5844NLWFT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 61A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock4,806
NVMFS5885NLT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 39A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock3,186
NVMFS5885NLT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 39A SO8FL Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	In Stock7,956

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