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NVMFS5113PLT1G

NVMFS5113PLT1G

For Reference Only

Part Number NVMFS5113PLT1G
PNEDA Part # NVMFS5113PLT1G
Description MOSFET P-CH 60V 64A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5113PLT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5113PLT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5113PLT1G, NVMFS5113PLT1G Datasheet (Total Pages: 7, Size: 181.73 KB)
PDFNVMFS5113PLWFT1G Datasheet Cover
NVMFS5113PLWFT1G Datasheet Page 2 NVMFS5113PLWFT1G Datasheet Page 3 NVMFS5113PLWFT1G Datasheet Page 4 NVMFS5113PLWFT1G Datasheet Page 5 NVMFS5113PLWFT1G Datasheet Page 6 NVMFS5113PLWFT1G Datasheet Page 7

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NVMFS5113PLT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs83nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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