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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

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NVD5803NT4G
NVD5803NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 85A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,916
NVD5805NT4G
NVD5805NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 51A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,652
NVD5806NT4G
NVD5806NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,214
NVD5807NT4G
NVD5807NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 23A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,730
NVD5807NT4G-VF01
NVD5807NT4G-VF01

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 23A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK (SINGLE GAUGE)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,156
NVD5862NT4G
NVD5862NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 90A DPAK-4

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock11,083
NVD5863NLT4G
NVD5863NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 14.9A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock16,057
NVD5865NLT4G
NVD5865NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 10A DPAK-4

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,304
NVD5867NLT4G
NVD5867NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock53,340
NVD5867NLT4G-TB01
NVD5867NLT4G-TB01

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 22A DPAK DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,452
NVD5890NLT4G
NVD5890NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 123A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,366
NVD5890NT4G
NVD5890NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 100A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,244
NVD5C434NT4G
NVD5C434NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 40V 163A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 117W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,518
NVD5C446NT4G
NVD5C446NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 40V 101A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,326
NVD5C454NLT4G
NVD5C454NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,076
NVD5C454NT4G
NVD5C454NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,086
NVD5C460NLT4G
NVD5C460NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 47W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,114
NVD5C460NT4G
NVD5C460NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 47W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,452
NVD5C464NLT4G
NVD5C464NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock5,922
NVD5C464NT4G
NVD5C464NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 40V 59A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock36,918
NVD5C478NLT4G
NVD5C478NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,114
NVD5C478NT4G
NVD5C478NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,086
NVD5C486NLT4G
NVD5C486NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,352
NVD5C486NT4G
NVD5C486NT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 40V DPAK EXPANSION AND

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 17.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 18.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,138
NVD5C632NLT4G
NVD5C632NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 29A 155A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,042
NVD5C648NLT4G
NVD5C648NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

T6 60V LL DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 72W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,100
NVD5C668NLT4G
NVD5C668NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 49A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock26,100
NVD5C684NLT4G
NVD5C684NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 38A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,750
NVD5C688NLT4G
NVD5C688NLT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 17A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 18W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,840
NVD6414ANT4G
NVD6414ANT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 34A DPAK

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,788