Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVMFS5826NLT3G

NVMFS5826NLT3G

For Reference Only

Part Number NVMFS5826NLT3G
PNEDA Part # NVMFS5826NLT3G
Description MOSFET N-CH 60V 26A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5826NLT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5826NLT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5826NLT3G, NVMFS5826NLT3G Datasheet (Total Pages: 6, Size: 110.42 KB)
PDFNVMFS5826NLWFT3G Datasheet Cover
NVMFS5826NLWFT3G Datasheet Page 2 NVMFS5826NLWFT3G Datasheet Page 3 NVMFS5826NLWFT3G Datasheet Page 4 NVMFS5826NLWFT3G Datasheet Page 5 NVMFS5826NLWFT3G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVMFS5826NLT3G Datasheet
  • where to find NVMFS5826NLT3G
  • ON Semiconductor

  • ON Semiconductor NVMFS5826NLT3G
  • NVMFS5826NLT3G PDF Datasheet
  • NVMFS5826NLT3G Stock

  • NVMFS5826NLT3G Pinout
  • Datasheet NVMFS5826NLT3G
  • NVMFS5826NLT3G Supplier

  • ON Semiconductor Distributor
  • NVMFS5826NLT3G Price
  • NVMFS5826NLT3G Distributor

NVMFS5826NLT3G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 25V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

The Products You May Be Interested In

DMP1081UCB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3A (Ta), 3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0.9V, 4.5V

Rds On (Max) @ Id, Vgs

80mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

650mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Vgs (Max)

-6V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 6V

FET Feature

-

Power Dissipation (Max)

820mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-WLB1010-4

Package / Case

4-UFBGA, WLBGA

IRLU3410PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

105mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STP50NF25

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

69mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2670pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SI5401DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

32mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

SIA400EDJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

19mOhm @ 11A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1265pF @ 15V

FET Feature

-

Power Dissipation (Max)

19.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

Recently Sold

TCMT4100

TCMT4100

Vishay Semiconductor Opto Division

OPTOISO 3.75KV 4CH TRANS 16-SOP

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

PIC32MX250F128D-I/PT

PIC32MX250F128D-I/PT

Microchip Technology

IC MCU 32BIT 128KB FLASH 44TQFP

DPBT8105-7

DPBT8105-7

Diodes Incorporated

TRANS PNP 60V 1A SOT23-3

ADCMP600BRJZ-REEL7

ADCMP600BRJZ-REEL7

Analog Devices

IC COMP TTL/CMOS 1CHAN SOT23-5

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

S-8254AAFFT-TB-G

S-8254AAFFT-TB-G

ABLIC

IC LI-ION BATT PROTECT 16-TSSOP

NC7SZ32P5X

NC7SZ32P5X

ON Semiconductor

IC GATE OR 1CH 2-INP SC70-5

SMBJ36CA-13-F

SMBJ36CA-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

LSM115JE3/TR13

LSM115JE3/TR13

Microsemi

DIODE SCHOTTKY 15V 1A DO214BA

AD7403BRIZ

AD7403BRIZ

Analog Devices

IC MODULATOR 16BIT 20M 16SOIC