Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVMFS5832NLWFT1G

NVMFS5832NLWFT1G

For Reference Only

Part Number NVMFS5832NLWFT1G
PNEDA Part # NVMFS5832NLWFT1G
Description MOSFET N-CH 40V 120A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5832NLWFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5832NLWFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5832NLWFT1G, NVMFS5832NLWFT1G Datasheet (Total Pages: 6, Size: 114.46 KB)
PDFNVMFS5832NLWFT3G Datasheet Cover
NVMFS5832NLWFT3G Datasheet Page 2 NVMFS5832NLWFT3G Datasheet Page 3 NVMFS5832NLWFT3G Datasheet Page 4 NVMFS5832NLWFT3G Datasheet Page 5 NVMFS5832NLWFT3G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVMFS5832NLWFT1G Datasheet
  • where to find NVMFS5832NLWFT1G
  • ON Semiconductor

  • ON Semiconductor NVMFS5832NLWFT1G
  • NVMFS5832NLWFT1G PDF Datasheet
  • NVMFS5832NLWFT1G Stock

  • NVMFS5832NLWFT1G Pinout
  • Datasheet NVMFS5832NLWFT1G
  • NVMFS5832NLWFT1G Supplier

  • ON Semiconductor Distributor
  • NVMFS5832NLWFT1G Price
  • NVMFS5832NLWFT1G Distributor

NVMFS5832NLWFT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 127W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

The Products You May Be Interested In

SI8812DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

59mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 8V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-UFBGA

UPA1763G-E1-A

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

339pF @ 25V

FET Feature

-

Power Dissipation (Max)

53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM3J64CTC,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

370mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

CST3C

Package / Case

SC-101, SOT-883

BSC077N12NS3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

13.4A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 60V

FET Feature

-

Power Dissipation (Max)

139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

Recently Sold

LM348DT

LM348DT

STMicroelectronics

IC OPAMP GP 4 CIRCUIT 14SO

MF-R050

MF-R050

Bourns

PTC RESET FUSE 60V 500MA RADIAL

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

PIC16F1829T-I/SS

PIC16F1829T-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 20SSOP

LTM8045IY#PBF

LTM8045IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER +/-2.5 +/-15V

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

AP1533SG-13

AP1533SG-13

Diodes Incorporated

IC REG BUCK ADJUSTABLE 1.8A 8SOP

NUP2105LT1G

NUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

MAX13035EETE+

MAX13035EETE+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 16TQFN