Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP230N06L3 G

IPP230N06L3 G

For Reference Only

Part Number IPP230N06L3 G
PNEDA Part # IPP230N06L3-G
Description MOSFET N-CH 60V 30A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP230N06L3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP230N06L3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP230N06L3 G, IPP230N06L3 G Datasheet (Total Pages: 10, Size: 400.26 KB)
PDFIPB230N06L3GATMA1 Datasheet Cover
IPB230N06L3GATMA1 Datasheet Page 2 IPB230N06L3GATMA1 Datasheet Page 3 IPB230N06L3GATMA1 Datasheet Page 4 IPB230N06L3GATMA1 Datasheet Page 5 IPB230N06L3GATMA1 Datasheet Page 6 IPB230N06L3GATMA1 Datasheet Page 7 IPB230N06L3GATMA1 Datasheet Page 8 IPB230N06L3GATMA1 Datasheet Page 9 IPB230N06L3GATMA1 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP230N06L3 G Datasheet
  • where to find IPP230N06L3 G
  • Infineon Technologies

  • Infineon Technologies IPP230N06L3 G
  • IPP230N06L3 G PDF Datasheet
  • IPP230N06L3 G Stock

  • IPP230N06L3 G Pinout
  • Datasheet IPP230N06L3 G
  • IPP230N06L3 G Supplier

  • Infineon Technologies Distributor
  • IPP230N06L3 G Price
  • IPP230N06L3 G Distributor

IPP230N06L3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 30V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

The Products You May Be Interested In

BSP030,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 24V

FET Feature

-

Power Dissipation (Max)

8.3W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-73

Package / Case

TO-261-4, TO-261AA

STW20NK50Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

119nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SIHU2N80E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.75Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

315pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Long Leads, IPak, TO-251AB

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2630pF @ 25V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS-220SMD

Package / Case

PLUS-220SMD

TK2A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.26Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

EX-14A-PN

EX-14A-PN

Panasonic Industrial Automation Sales

SENSOR REFLECTIVE 25MM PNP

NFM21CC223R1H3D

NFM21CC223R1H3D

Murata

CAP FEEDTHRU 0.022UF 50V 0805

RB481KTL

RB481KTL

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

ADF4350BCPZ-RL7

ADF4350BCPZ-RL7

Analog Devices

IC SYNTH PLL VCO FN/IN 32LFCSP

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

HSMF-C155

HSMF-C155

Broadcom

LED GREEN/RED DIFFUSED CHIP SMD

M74HC390B1R

M74HC390B1R

STMicroelectronics

IC DECADE COUNTER DUAL 16-DIP

LM2901DR

LM2901DR

Rohm Semiconductor

IC COMPARATOR QUAD GP 14-SOIC

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123