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IPL60R365P7AUMA1

IPL60R365P7AUMA1

For Reference Only

Part Number IPL60R365P7AUMA1
PNEDA Part # IPL60R365P7AUMA1
Description MOSFET N-CH 650V 10A VSON-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 52,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPL60R365P7AUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPL60R365P7AUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPL60R365P7AUMA1, IPL60R365P7AUMA1 Datasheet (Total Pages: 14, Size: 1,327.62 KB)
PDFIPL60R365P7AUMA1 Datasheet Cover
IPL60R365P7AUMA1 Datasheet Page 2 IPL60R365P7AUMA1 Datasheet Page 3 IPL60R365P7AUMA1 Datasheet Page 4 IPL60R365P7AUMA1 Datasheet Page 5 IPL60R365P7AUMA1 Datasheet Page 6 IPL60R365P7AUMA1 Datasheet Page 7 IPL60R365P7AUMA1 Datasheet Page 8 IPL60R365P7AUMA1 Datasheet Page 9 IPL60R365P7AUMA1 Datasheet Page 10 IPL60R365P7AUMA1 Datasheet Page 11

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IPL60R365P7AUMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs365mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds555pF @ 400V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-VSON-4
Package / Case4-PowerTSFN

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