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IPL60R185P7AUMA1

IPL60R185P7AUMA1

For Reference Only

Part Number IPL60R185P7AUMA1
PNEDA Part # IPL60R185P7AUMA1
Description MOSFET N-CH 650V 19A VSON-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 56,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPL60R185P7AUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPL60R185P7AUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPL60R185P7AUMA1, IPL60R185P7AUMA1 Datasheet (Total Pages: 14, Size: 1,325.47 KB)
PDFIPL60R185P7AUMA1 Datasheet Cover
IPL60R185P7AUMA1 Datasheet Page 2 IPL60R185P7AUMA1 Datasheet Page 3 IPL60R185P7AUMA1 Datasheet Page 4 IPL60R185P7AUMA1 Datasheet Page 5 IPL60R185P7AUMA1 Datasheet Page 6 IPL60R185P7AUMA1 Datasheet Page 7 IPL60R185P7AUMA1 Datasheet Page 8 IPL60R185P7AUMA1 Datasheet Page 9 IPL60R185P7AUMA1 Datasheet Page 10 IPL60R185P7AUMA1 Datasheet Page 11

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IPL60R185P7AUMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs185mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1081pF @ 400V
FET Feature-
Power Dissipation (Max)81W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-VSON-4
Package / Case4-PowerTSFN

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