Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 120/2164

Part Number	Description	In Stock
BFQ19,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.3dB @ 500MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock3,436
BFQ 19S E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz Gain: 7dB ~ 11.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 210mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	In Stock8,208
BFQ19SH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3dB @ 1.8GHz Gain: 7dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock2,520
BFQ31ATA Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3 Manufacturer: Diodes Incorporated Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock6,120
BFQ31ATC Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3 Manufacturer: Diodes Incorporated Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock4,716
BFQ540,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 9GHZ SOT89-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock2,160
BFQ591,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 7GHZ SOT89-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock4,050
BFQ67,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ TO236AB Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	In Stock2,790
BFQ67W,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock2,016
BFQ67W,135 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ SOT323-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	In Stock4,752
BFQ790H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6.1V 1.85GHZ SOT89 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.1V Frequency - Transition: 1.85GHz Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz Gain: 17dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock65,484
BFR106,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ TO236AB Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	In Stock7,182
BFR106E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz Gain: 8.5dB ~ 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 210mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock209,556
BFR181E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,190
BFR 181 E6780 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock3,492
BFR 181T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz Gain: 19.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock2,592
BFR 181W E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock7,200
BFR181WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock337,194
BFR 182 B6663 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock3,150
BFR182E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock25,008
BFR 182T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock8,118
BFR 182W E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock8,676
BFR182WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock27,858
BFR183E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 17.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock98,322
BFR 183T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 19.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock2,448
BFR 183W E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock3,672
BFR183WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock6,174
BFR193E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock321,858
BFR193FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ TSFP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock53,880
BFR193L3E6327XTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ TSLP-3-1 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	In Stock2,070

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