BFR182E6327HTSA1
For Reference Only
| Part Number | BFR182E6327HTSA1 |
| PNEDA Part # | BFR182E6327HTSA1 |
| Description | RF TRANS NPN 12V 8GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 25,008 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 9 - Jun 14 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR182E6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR182E6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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BFR182E6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Gain | 12dB ~ 18dB |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 900MHz Noise Figure (dB Typ @ f) 4.5dB @ 200MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10.5GHz Noise Figure (dB Typ @ f) 1dB @ 1.8GHz Gain 17.5dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V Current - Collector (Ic) (Max) 30mA Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-143R Supplier Device Package SOT-143R |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 5V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323-3 |
